RUTHERFORD BACKSCATTERING AND ELLIPSOMETRY OF SELENIUM IMPLANTED INP

[1] DETERMINATION OF PROPERTIES OF FILMS ON SILICON BY METHOD OF ELLIPSOMETRY [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1962, 52 (09) : 970 - &

[2] Brice D. K., 1970, Radiation Effects, V6, P77, DOI 10.1080/00337577008235048

[3] Chu WK., 1978, BACKSCATTERING SPECT

[4] IMPLANTATION AND PH3 AMBIENT ANNEALING OF INP [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (11) : 1845 - 1848

[5] N-TYPE DOPING OF INDIUM-PHOSPHIDE BY IMPLANTATION [J]. SOLID-STATE ELECTRONICS, 1978, 21 (07) : 981 - 985

[6] DEARNALEY G., 1973, ION IMPLANTATION

[7] ION-IMPLANTED N-TYPE AND P-TYPE LAYERS IN INPA [J]. APPLIED PHYSICS LETTERS, 1977, 31 (07) : 418 - 420

[8] GECIM S, 1980, RAD EFF, V49, P169

[9] GIBBONS JF, 1974, PROJECTED RANGE STAT

[10] ELECTRIC FIELDS PRODUCED BY PROPAGATION OF PLANE COHERENT ELECTROMAGNETIC RADIATION IN A STRATIFIED MEDIUM [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1968, 58 (03) : 380 - &

[1] DETERMINATION OF PROPERTIES OF FILMS ON SILICON BY METHOD OF ELLIPSOMETRY [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1962, 52 (09) : 970 - &

[2] Brice D. K., 1970, Radiation Effects, V6, P77, DOI 10.1080/00337577008235048

[3] Chu WK., 1978, BACKSCATTERING SPECT

[4] IMPLANTATION AND PH3 AMBIENT ANNEALING OF INP [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (11) : 1845 - 1848

[5] N-TYPE DOPING OF INDIUM-PHOSPHIDE BY IMPLANTATION [J]. SOLID-STATE ELECTRONICS, 1978, 21 (07) : 981 - 985

[6] DEARNALEY G., 1973, ION IMPLANTATION

[7] ION-IMPLANTED N-TYPE AND P-TYPE LAYERS IN INPA [J]. APPLIED PHYSICS LETTERS, 1977, 31 (07) : 418 - 420

[8] GECIM S, 1980, RAD EFF, V49, P169

[9] GIBBONS JF, 1974, PROJECTED RANGE STAT

[10] ELECTRIC FIELDS PRODUCED BY PROPAGATION OF PLANE COHERENT ELECTROMAGNETIC RADIATION IN A STRATIFIED MEDIUM [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1968, 58 (03) : 380 - &