N-TYPE DOPING OF INDIUM-PHOSPHIDE BY IMPLANTATION

被引：47

作者：

DAVIES, DE

LORENZO, JP

RYAN, TG

机构：

来源：

SOLID-STATE ELECTRONICS | 1978年 / 21卷 / 07期

关键词：

D O I：

10.1016/0038-1101(78)90298-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：981 / 985

页数：5

相关论文

共 19 条

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[7] COMPENSATION FROM IMPLANTATION IN GAAS
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[8] DAVIES DT, UNPUBLISHED
[9] DONNELLY JP, 1976, SEP P INT S GALL ARS, P166
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