PULSED LASER ANNEALING OF SELENIUM IMPLANTED INP

被引：8

作者：

GILL, SS

TOPHAM, PJ

SEALY, BJ

STEPHENS, KG

机构：

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1981年 / 14卷 / 12期

关键词：

D O I：

10.1088/0022-3727/14/12/024

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2333 / &

共 7 条

[1]

CULLIS AG, 1978, AIP C P, V50, P653

[2] INP SURFACE CONDUCTING FILMS FROM ELECTRON-PULSE ANNEALING [J].

DAVIES, DE ;

KENNEDY, EF ;

COMER, JJ ;

LORENZO, JP .

APPLIED PHYSICS LETTERS, 1980, 36 (11) :922-924

[3] PULSE ELECTRON ANNEALING OF ION-IMPLANTED INP [J].

DAVIES, DE ;

LORENZO, JP ;

RYAN, TG ;

FITZGERALD, JJ .

APPLIED PHYSICS LETTERS, 1979, 35 (08) :631-633

[4]

FAN JCC, 1979, I PHYS C SER, V45, P472

[5] RUTHERFORD BACKSCATTERING AND ELLIPSOMETRY OF SELENIUM IMPLANTED INP [J].

GILL, SS ;

SEALY, BJ ;

STEPHENS, KG .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1981, 14 (10) :1915-1922

[6] ANNEALING OF SI3N4-CAPPED ION-IMPLANTED INP [J].

GILL, SS ;

SEALY, BJ ;

TOPHAM, PJ ;

BARRETT, NJ ;

STEPHENS, KG .

ELECTRONICS LETTERS, 1981, 17 (17) :623-624

[7] LASER ANNEALING OF CAPPED AND UNCAPPED GAAS [J].

KULAR, SS ;

SEALY, BJ ;

BADAWI, MH ;

STEPHENS, KG ;

SADANA, D ;

BOOKER, GR .

ELECTRONICS LETTERS, 1979, 15 (14) :413-414

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