PULSE ANNEALING OF IMPLANTED INP WITH MINIMAL PHOSPHORUS LOSS

被引：5

作者：

DAVIES, DE

KENNEDY, EF

LORENZO, JP

机构：

[1] USAF, ROME AIR DEV CTR, DIV SOLID STATE SCI, BEDFORD, MA 01731 USA

[2] HOLY CROSS COLL, WORCESTER, MA USA

来源：

ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 01期

关键词：

D O I：

10.1109/EDL.1982.25453

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：4 / 6

页数：3

相关论文

共 6 条

[1] INP SURFACE CONDUCTING FILMS FROM ELECTRON-PULSE ANNEALING
DAVIES, DE
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[2] PULSE ELECTRON ANNEALING OF ION-IMPLANTED INP
DAVIES, DE
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FITZGERALD, JJ
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (08) : 631 - 633
[3] DAVIES DE, 1980, GAAS RELATED COMPOUN, P229
[4] PULSED-ELECTRON-BEAM ANNEALING OF ION-IMPLANTATION DAMAGE
GREENWALD, AC
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LITTLE, RG
MINNUCCI, JA
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 783 - 787
[5] ANODIC-OXIDATION AND ELECTRICAL CARRIER CONCENTRATION PROFILES OF ION-IMPLANTED INP
LORENZO, JP
DAVIES, DE
RYAN, TG
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (01) : 118 - 121
[6] REDISTRIBUTION OF DOPANTS IN ION-IMPLANTED SILICON BY PULSED-LASER ANNEALING
WHITE, CW
CHRISTIE, WH
APPLETON, BR
WILSON, SR
PRONKO, PP
MAGEE, CW
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 662 - 664