SILICON-ION IMPLANTATION IN INP AND ANNEALING WITH CVD SIO2 ENCAPSULATION

被引：15

作者：

NISHIOKA, T

OHMACHI, Y

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 11期

关键词：

D O I：

10.1063/1.327535

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：5789 / 5791

页数：3

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