THE ELECTRICAL CHARACTERISTICS OF INP IMPLANTED WITH THE COLUMN-IV ELEMENTS

被引：39

作者：

DONNELLY, JP

FERRANTE, GA

机构：

来源：

SOLID-STATE ELECTRONICS | 1980年 / 23卷 / 11期

关键词：

D O I：

10.1016/0038-1101(80)90026-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1151 / 1154

页数：4

共 16 条

[1] BARRIER-FREE CONTACTS ON INDIUM PHOSPHIDE [J].

BECKER, R .

SOLID-STATE ELECTRONICS, 1973, 16 (11) :1241-1249

[2] IMPLANTATION AND PH3 AMBIENT ANNEALING OF INP [J].

DAVIES, DE ;

POTTER, WD ;

LORENZO, JP .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (11) :1845-1848

[3] N-TYPE DOPING OF INDIUM-PHOSPHIDE BY IMPLANTATION [J].

DAVIES, DE ;

LORENZO, JP ;

RYAN, TG .

SOLID-STATE ELECTRONICS, 1978, 21 (07) :981-985

[4]

DAVIES DE, 1979, APPL PHYS LETT, V35, P142

[5]

DEVLIN WT, 1978, GALLIUM ARSENIDE REL, P510

[6] ION-IMPLANTED N-TYPE AND P-TYPE LAYERS IN INPA [J].

DONNELLY, JP ;

HURWITZ, CE .

APPLIED PHYSICS LETTERS, 1977, 31 (07) :418-420

[7] THE EFFECT OF IMPLANT TEMPERATURE ON THE ELECTRICAL CHARACTERISTICS OF ION-IMPLANTED INDIUM-PHOSPHIDE [J].

DONNELLY, JP ;

HURWITZ, CE .

SOLID-STATE ELECTRONICS, 1980, 23 (09) :943-948

[8] BERYLLIUM-ION IMPLANTATION IN INP AND IN1-XGAXASYP1-Y [J].

DONNELLY, JP ;

ARMIENTO, CA .

APPLIED PHYSICS LETTERS, 1979, 34 (01) :96-99

[9]

GIBBONS JF, 1975, PROJECTED RANGE STAT

[10]

Harris J. S., 1971, ION IMPLANTATION SEM, P157

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