THE EFFECT OF IMPLANT TEMPERATURE ON THE ELECTRICAL CHARACTERISTICS OF ION-IMPLANTED INDIUM-PHOSPHIDE

被引：47

作者：

DONNELLY, JP

HURWITZ, CE

机构：

来源：

SOLID-STATE ELECTRONICS | 1980年 / 23卷 / 09期

关键词：

D O I：

10.1016/0038-1101(80)90059-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：943 / 948

页数：6

相关论文

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