IMPROVED ELECTRICAL MOBILITIES FROM IMPLANTING INP AT ELEVATED-TEMPERATURES

被引：25

作者：

DAVIES, DE

COMER, JJ

LORENZO, JP

RYAN, TG

机构：

[1] Deputy for Electronic Technology, Hanscom AFB, Bedford

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 02期

关键词：

D O I：

10.1063/1.91033

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InP has been implanted with silicon to investigate the effect of implantation temperature on the postannealed electrical mobility. A significant improvement, by a factor of ∼2, occurs on implanting at 200°C rather than at room temperature. Dislocations found after the room-temperature but not the 200°C implants may account for the mobility differences.

引用

页码：192 / 194

页数：3

共 17 条

[1] INDIUM-PHOSPHIDE .2. LIQUID EPITAXIAL-GROWTH
ASTLES, MG
SMITH, FGH
WILLIAMS, EW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (12) : 1750 - 1757
[2] BOOYENS H, 1974, J APPL PHYS, V48, P504
[3] IMPLANTATION AND PH3 AMBIENT ANNEALING OF INP
DAVIES, DE
POTTER, WD
LORENZO, JP
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (11) : 1845 - 1848
[4] COMPARISON OF GROUP-4 AND GROUP-6 DOPING BY IMPLANTATION IN GAAS
DAVIES, DE
KENNEDY, JK
LUDINGTON, CE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (10) : 1374 - 1377
[5] N-TYPE DOPING OF INDIUM-PHOSPHIDE BY IMPLANTATION
DAVIES, DE
LORENZO, JP
RYAN, TG
[J]. SOLID-STATE ELECTRONICS, 1978, 21 (07) : 981 - 985
[6] ROLE OF ELEVATED-TEMPERATURES IN IMPLANTATION OF GAAS
DAVIES, DE
ROOSILD, S
LOWE, L
[J]. SOLID-STATE ELECTRONICS, 1975, 18 (09) : 733 - 736
[7] DAVIES DT, UNPUBLISHED
[8] SILICON-ION-IMPLANTED AND SELENIUM-ION-IMPLANTED GAAS REPRODUCIBLY ANNEALED AT TEMPERATURES UP TO 950DEGREESC
DONNELLY, JP
LINDLEY, WT
HURWITZ, CE
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (01) : 41 - 43
[9] EISEN FH, 1973, ION IMPLANTATION SEM, P631
[10] ERICKSON L, 1969, J APPL PHYS, V40, P842

← 1 2 →