SCHOTTKY AND FIELD-EFFECT TRANSISTOR FABRICATION ON INP AND GAINAS

被引：40

作者：

LOUALICHE, S

LHARIDON, H

LECORRE, A

LECROSNIER, D

SALVI, M

FAVENNEC, PN

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 07期

关键词：

D O I：

10.1063/1.99410

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：540 / 542

页数：3

共 10 条

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IEEE ELECTRON DEVICE LETTERS, 1985, 6 (07) :384-386

[2]

KAJIYAMA K, 1973, APPAL PHYS LETT, V23, P758

[3] RESIDUAL DEFECT CENTER IN GAINAS/INP FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J].

LOUALICHE, S ;

GAUNEAU, A ;

LECORRE, A ;

LECROSNIER, D ;

LHARIDON, H .

APPLIED PHYSICS LETTERS, 1987, 51 (17) :1361-1363

[4]

LOUALICHE S, 1987, Patent No. 8711474

[5] X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF THE EFFECTS OF ULTRAPURE WATER ON GAAS [J].

MASSIES, J ;

CONTOUR, JP .

APPLIED PHYSICS LETTERS, 1985, 46 (12) :1150-1152

[6] INCREASING EFFECTIVE BARRIER HEIGHT OF SCHOTTKY CONTACTS TO N-INXGA1-XAS [J].

MORGAN, DV ;

FREY, J .

ELECTRONICS LETTERS, 1978, 14 (23) :737-738

[7]

NAG BR, 1986, IEEE T ELECTRON DEVI, V33, P188

[8] VERY HIGH TRANSCONDUCTANCE INGAAS/INP JUNCTION FIELD-EFFECT TRANSISTOR WITH SUBMICROMETER GATE [J].

RAULIN, JY ;

THORNGREN, E ;

DIFORTEPOISSON, MA ;

RAZEGHI, M ;

COLOMER, G .

APPLIED PHYSICS LETTERS, 1987, 50 (09) :535-536

[9]

SZE SM, 1981, PHYSICS SEMICONDUCTO, P541

[10] LOW LEAKAGE NEARLY IDEAL SCHOTTKY BARRIERS TO N-INP [J].

WADA, O ;

MAJERFELD, A .

ELECTRONICS LETTERS, 1978, 14 (05) :125-126

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