RESIDUAL DEFECT CENTER IN GAINAS/INP FILMS GROWN BY MOLECULAR-BEAM EPITAXY

被引：26

作者：

LOUALICHE, S

GAUNEAU, A

LECORRE, A

LECROSNIER, D

LHARIDON, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 17期

关键词：

D O I：

10.1063/1.98679

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1361 / 1363

页数：3

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