学术探索
学术期刊
新闻热点
数据分析
智能评审

EFFECT OF OXYGEN ON IN0.53GA0.47AS FILMS GROWN BY MOLECULAR-BEAM EPITAXY

被引：16
作者：
STALL, RA
WUNDER, RJ
SWAMINATHAN, V
COX, HM
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
[2] BELL COMMUN RES,MURRAY HILL,NJ 07974
来源：
APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 05期
关键词：
D O I：
10.1063/1.96112
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：518 / 520
页数：3
相关论文
共 5 条
[1]   ELECTRICAL AND OPTICAL-PROPERTIES OF SI-DOPED AND SN-DOPED INXGA1-XAS(X CONGRUENT-TO 0.53) GROWN BY MOLECULAR-BEAM EPITAXY [J].
KUBIAK, RA ;
HARRIS, JJ ;
DAWSON, P .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (02) :598-600
[2]   GROWTH OF IN0.53GA0.47AS AND INP ON INP SUBSTRATE BY MOLECULAR-BEAM EPITAXY [J].
LAMBERT, M ;
HUET, D .
REVUE DE PHYSIQUE APPLIQUEE, 1983, 18 (12) :757-761
[3]   CORRELATION BETWEEN BACKGROUND CARRIER CONCENTRATION AND X-RAY LINEWIDTH FOR INGAAS/INP GROWN BY VAPOR-PHASE EPITAXY [J].
MACRANDER, AT ;
CHU, SNG ;
STREGE, KE ;
BLOEMEKE, AF ;
JOHNSTON, WD .
APPLIED PHYSICS LETTERS, 1984, 44 (06) :615-617
[4]   THEORY OF AN EXPERIMENT FOR MEASURING THE MOBILITY AND DENSITY OF CARRIERS IN THE SPACE-CHARGE REGION OF A SEMICONDUCTOR SURFACE [J].
PETRITZ, RL .
PHYSICAL REVIEW, 1958, 110 (06) :1254-1262
[5]  
WUNDER RJ, UNPUB
1