共 10 条
[1]
MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF IN0.53GA0.47AS AND INP SUBSTRATE
[J].
JOURNAL DE PHYSIQUE,
1982, 43 (NC-5)
:445-452
[2]
Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9
[3]
Cho A. Y., 1976, U.S. patent, Patent No. [3,969,164, 3969164]
[7]
MASSIES J, 1985, J APPL PHYS, V57
[8]
PLOOG K, 1980, CRYSTALS GROWTH PROP, V3, P73
[9]
CLEANING CHEMISTRY OF GAAS(100) AND INSB(100) SUBSTRATES FOR MOLECULAR-BEAM EPITAXY
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1983, 1 (03)
:791-794