MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF IN0.53GA0.47AS AND INP SUBSTRATE

被引：3

作者：

BONNEVIE, D

HUET, D

机构：

来源：

JOURNAL DE PHYSIQUE | 1982年 / 43卷 / NC-5期

关键词：

D O I：

10.1051/jphyscol:1982552

中图分类号：

学科分类号：

摘要：

引用

页码：445 / 452

页数：8

共 9 条

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