MOLECULAR-BEAM EPITAXIAL GROUP-III ARSENIDE ALLOYS - EFFECT OF SUBSTRATE-TEMPERATURE ON COMPOSITION

被引：23

作者：

WOOD, CEC ^{[1
]}

MORGAN, DV ^{[1
]}

RATHBUN, L ^{[1
]}

机构：

[1] CORNELL UNIV, NATL RES & RESOURCE FACIL SUBMICRON STRUCT, ITHACA, NY 14853 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 06期

关键词：

D O I：

10.1063/1.331195

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4524 / 4526

页数：3

共 13 条

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[7] VERY LOW CURRENT THRESHOLD GAAS-ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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[8] MOLECULAR-BEAM EPITAXIAL GAAS-ALXGA1-XAS HETEROSTRUCTURES FOR METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR APPLICATIONS [J].

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[10] PHOTOLUMINESCENCE OF ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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