共 15 条
[1]
MORPHOLOGICAL DEFECTS ARISING DURING MBE GROWTH OF GAAS
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1981, 18 (03)
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[5]
LOCAL ATOMIC AND ELECTRONIC-STRUCTURE OF OXIDE-GAAS AND SIO2-SI INTERFACES USING HIGH-RESOLUTION XPS
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1979, 16 (05)
:1443-1453
[6]
CHEMICAL DEPTH PROFILES OF THE GAAS-NATIVE OXIDE INTERFACE
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1980, 17 (05)
:1045-1051
[7]
COMBINED RHEED-AES STUDY OF THE THERMAL-TREATMENT OF (001) GAAS SURFACE PRIOR TO MBE GROWTH
[J].
APPLIED PHYSICS,
1979, 19 (01)
:63-70
[8]
INSITU CHARACTERIZATION OF MBE GROWN GAAS AND ALXGA1-XAS FILMS USING RHEED, SIMS, AND AES TECHNIQUES
[J].
APPLIED PHYSICS,
1977, 13 (02)
:111-121
[9]
PLOOG K, 1980, CRYSTALS GROWTH PROP, V3, P73