CHEMICAL DEPTH PROFILES OF THE GAAS-NATIVE OXIDE INTERFACE

被引：64

作者：

GRUNTHANER, PJ

VASQUEZ, RP

GRUNTHANER, FJ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1980年 / 17卷 / 05期

关键词：

D O I：

10.1116/1.570588

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1045 / 1051

页数：7

共 16 条

[1]

BAUER RS, 1979, 14TH P INT C PHYS SE, P797

[2] OXYGEN INTERACTION WITH GAAS-SURFACES - XPS-UPS STUDY [J].

BRUNDLE, CR ;

SEYBOLD, D .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1186-1190

[3]

BUTLER CG, UNPUBLISHED

[4] EXPERIMENTAL-OBSERVATIONS OF CHEMISTRY OF SIO2-SI INTERFACE [J].

GRUNTHANER, FJ ;

MASERJIAN, J .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) :2108-2112

[5] LOCAL ATOMIC AND ELECTRONIC-STRUCTURE OF OXIDE-GAAS AND SIO2-SI INTERFACES USING HIGH-RESOLUTION XPS [J].

GRUNTHANER, FJ ;

GRUNTHANER, PJ ;

VASQUEZ, RP ;

LEWIS, BF ;

MASERJIAN, J ;

MADHUKAR, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1443-1453

[6] STUDIES OF THE EFFECT OF OXIDATION TIME AND TEMPERATURE ON THE SI-SIO2 INTERFACE USING AUGER SPUTTER PROFILING [J].

HELMS, CR ;

JOHNSON, NM ;

SCHWARZ, SA ;

SPICER, WE .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) :7007-7014

[7] CHARACTERIZATION OF IMPROVED INSB INTERFACES [J].

LANGAN, JD ;

VISWANATHAN, CR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1474-1477

[8] QUANTITATIVE CHEMICAL DEPTH PROFILES OF ANODIC OXIDE ON GAAS OBTAINED BY X-RAY PHOTOELECTRON-SPECTROSCOPY [J].

MIZOKAWA, Y ;

IWASAKI, H ;

NISHITANI, R ;

NAKAMURA, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) :1370-1374

[9] DETERMINATION OF OXYGEN BINDING-SITE ON GAAS(110) USING SOFT-X-RAY-PHOTOEMISSION SPECTROSCOPY [J].

PIANETTA, P ;

LINDAU, I ;

GARNER, C ;

SPICER, WE .

PHYSICAL REVIEW LETTERS, 1975, 35 (20) :1356-1359

[10] OXIDATION PROPERTIES OF GAAS (110) SURFACES [J].

PIANETTA, P ;

LINDAU, I ;

GARNER, CM ;

SPICER, WE .

PHYSICAL REVIEW LETTERS, 1976, 37 (17) :1166-1169

← 1 2 →