DEEP FE AND INTRINSIC DEFECT LEVELS IN GA0.47IN0.53AS INP

被引：10

作者：

GOETZ, KH

BIMBERG, D

BRAUCHLE, KA

JURGENSEN, H

SELDERS, J

RAZEGHI, M

KUPHAL, E

机构：

[1] DEUTSCH BUNDESPOST FTZ,FORSCHUNGSINST,D-6100 DARMSTADT,FED REP GER

[2] RHEIN WESTFAL TH AACHEN,SFB 202,BASISLABOR,D-5100 AACHEN,FED REP GER

[3] TECH UNIV BERLIN,INST FESTKORPERPHYS 1,D-1000 BERLIN,FED REP GER

[4] THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 03期

关键词：

D O I：

10.1063/1.95657

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：277 / 279

页数：3

共 15 条

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[4] DEEP LEVELS IN IN0.53GA0.47AS/INP HETEROSTRUCTURES [J].

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[5]

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[6] OPTICAL AND CRYSTALLOGRAPHIC PROPERTIES AND IMPURITY INCORPORATION OF GAXIN1-XAS (0.44 LESS-THAN X LESS-THAN 0.49) GROWN BY LIQUID-PHASE EPITAXY, VAPOR-PHASE EPITAXY, AND METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J].

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RAZEGHI, M .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) :4543-4552

[7] TWO-DIMENSIONAL ELECTRON-GAS IN A IN0.53GA0.47AS-INP HETEROJUNCTION GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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APPLIED PHYSICS LETTERS, 1982, 40 (10) :877-879

[8] A HIGH-GAIN IN0.53GA0.47AS-INP AVALANCHE PHOTO-DIODE WITH NO TUNNELING LEAKAGE CURRENT [J].

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[9] ULTRAFAST THIN-FILM GAAS PHOTOCONDUCTIVE DETECTORS [J].

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[10] SMALL AREA INGAAS-INP P-I-N PHOTO-DIODES - FABRICATION, CHARACTERISTICS AND PERFORMANCE OF DEVICES IN 274-MB-S AND 45-MB-S LIGHTWAVE RECEIVERS AT 1.31 MU-M WAVELENGTH [J].

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