FAST PHOTOCONDUCTIVE DETECTOR USING PARA-INO.53GAO.47AS WITH RESPONSE TO 1.7-MU-M

被引：31

作者：

DEGANI, J

LEHENY, RF

NAHORY, RE

POLLACK, MA

HERITAGE, JP

DEWINTER, JC

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 01期

关键词：

D O I：

10.1063/1.92114

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：27 / 29

页数：3

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[4] COMPOSITIONAL DEPENDENCE OF THE ELECTRON-MOBILITY IN IN1-XGAXASYP1-Y
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[5] HIGH-SPEED INP OPTOELECTRONIC SWITCH
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[6] VELOCITY-FIELD CHARACTERISTICS OF GA1-XINXP1-YASY QUATERNARY ALLOYS
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[J]. APPLIED PHYSICS LETTERS, 1977, 30 (05) : 242 - 244