SELF-ALIGNED IN0.53GA0.47AS/SEMI-INSULATING/N+ INP JUNCTION FIELD-EFFECT TRANSISTORS

被引:16
作者
CHENG, J
STALL, R
FORREST, SR
LONG, J
CHENG, CL
GUTH, G
WUNDER, R
RIGGS, VG
机构
关键词
D O I
10.1109/EDL.1985.26163
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:384 / 386
页数:3
相关论文
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