共 11 条
[2]
GAAS INTEGRATED OPTOELECTRONICS
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1982, 29 (09)
:1372-1381
[3]
DOUBLE HETEROSTRUCTURE GA0.47IN0.53AS MESFETS WITH SUB-MICRON GATES
[J].
ELECTRON DEVICE LETTERS,
1980, 1 (09)
:174-176
[5]
CHANG TY, 1980, IEEE ELECTRON DEVICE, V1, P154
[6]
CHENG J, 1985, FEB P OPT FIB COMM C, P92
[7]
KIJIYAMA K, 1973, APPL PHYS LETT, V23, P458
[8]
AN IN0.53GA0.47AS JUNCTION FIELD-EFFECT TRANSISTOR
[J].
ELECTRON DEVICE LETTERS,
1980, 1 (06)
:110-111
[9]
IN0.53GA0.47AS FETS WITH INSULATOR-ASSISTED SCHOTTKY GATES
[J].
ELECTRON DEVICE LETTERS,
1982, 3 (03)
:64-66
[10]
DOUBLE HETEROSTRUCTURE GA0.47IN0.53AS MESFETS BY MBE
[J].
ELECTRON DEVICE LETTERS,
1980, 1 (08)
:154-155