SELF-ALIGNED IN0.53GA0.47AS/SEMI-INSULATING/N+ INP JUNCTION FIELD-EFFECT TRANSISTORS

被引：16

作者：

CHENG, J

STALL, R

FORREST, SR

LONG, J

CHENG, CL

GUTH, G

WUNDER, R

RIGGS, VG

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 07期

关键词：

D O I：

10.1109/EDL.1985.26163

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：384 / 386

页数：3

共 11 条

[1] SATURATION VELOCITY DETERMINATION FOR IN0.53GA0.47AS FIELD-EFFECT TRANSISTORS [J].

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[2] GAAS INTEGRATED OPTOELECTRONICS [J].

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URY, I .

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[3] DOUBLE HETEROSTRUCTURE GA0.47IN0.53AS MESFETS WITH SUB-MICRON GATES [J].

BARNARD, J ;

OHNO, H ;

WOOD, CEC ;

EASTMAN, LF .

ELECTRON DEVICE LETTERS, 1980, 1 (09) :174-176

[4] IN0.53 GA0.47 AS SUBMICROMETER FETS GROWN BY MBE [J].

CHAI, YG ;

YEATS, R .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (07) :252-254

[5]

CHANG TY, 1980, IEEE ELECTRON DEVICE, V1, P154

[6]

CHENG J, 1985, FEB P OPT FIB COMM C, P92

[7]

KIJIYAMA K, 1973, APPL PHYS LETT, V23, P458

[8] AN IN0.53GA0.47AS JUNCTION FIELD-EFFECT TRANSISTOR [J].

LEHENY, RF ;

NAHORY, RE ;

POLLACK, MA ;

BALLMAN, AA ;

BEEBE, ED ;

DEWINTER, JC ;

MARTIN, RJ .

ELECTRON DEVICE LETTERS, 1980, 1 (06) :110-111

[9] IN0.53GA0.47AS FETS WITH INSULATOR-ASSISTED SCHOTTKY GATES [J].

OCONNOR, P ;

PEARSALL, TP ;

CHENG, KY ;

CHO, AY ;

HWANG, JCM ;

ALAVI, K .

ELECTRON DEVICE LETTERS, 1982, 3 (03) :64-66

[10] DOUBLE HETEROSTRUCTURE GA0.47IN0.53AS MESFETS BY MBE [J].

OHNO, H ;

BARNARD, J ;

WOOD, CEC ;

EASTMAN, LF .

ELECTRON DEVICE LETTERS, 1980, 1 (08) :154-155

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