EFFECTS ON INP SURFACE TRAP STATES OF INSITU ETCHING AND PHOSPHORUS-NITRIDE DEPOSITION

被引:24
作者
JEONG, YH
TAKAGI, S
ARAI, F
SUGANO, T
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D O I
10.1063/1.339501
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O59 [应用物理学];
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页码:2370 / 2375
页数:6
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