ELECTRONIC-PROPERTIES OF METAL-INSULATOR-SEMICONDUCTOR DEVICES PREPARED ON THERMALLY TREATED INP IN PHOSPHORUS OVERPRESSURE

被引：15

作者：

CHOUJAA, A

CHAVE, J

BLANCHET, R

VIKTOROVITCH, P

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 06期

关键词：

D O I：

10.1063/1.337177

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2191 / 2193

页数：3

共 11 条

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[8]

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[10] HOMOEPITAXIAL MOLECULAR-BEAM GROWTH OF INP ON THERMALLY CLEANED (100) ORIENTED SUBSTRATES [J].

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