THE GROWTH OF EPITAXIAL INP BY THE CHLORIDE PROCESS IN NITROGEN AND IN THE PRESENCE OF PHOSPHINE

被引：7

作者：

GILES, PL

DAVIES, P

HASDELL, NB

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1983年 / 61卷 / 03期

关键词：

D O I：

10.1016/0022-0248(83)90201-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：695 / 697

页数：3

共 12 条

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[3]

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QUINLAN, KP .

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[5]

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[6]

HALES MC, COMMUNICATION

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DAZAI, K ;

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[8] REACTION EQUILIBRIA IN GROWTH OF GAAS AND GAP BY CHLORIDE TRANSPORT PROCESS [J].

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[9] VAPOR GROWTH KINETICS OF 3-5 COMPOUNDS IN A HYDROGEN INERT GAS MIXED CARRIER SYSTEM [J].

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