VAPOR GROWTH KINETICS OF 3-5 COMPOUNDS IN A HYDROGEN INERT GAS MIXED CARRIER SYSTEM

被引：41

作者：

MIZUNO, O ^{[1
]}

WATANABE, H ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD,CENT RES LABS,KAWASAKI,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1975年 / 30卷 / 02期

关键词：

D O I：

10.1016/0022-0248(75)90095-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：240 / 248

页数：9

共 17 条

[1]

ASAO I, COMMUNICATION

[2]

BLAKESLEE AE, 1969, T METALL SOC AIME, V245, P577

[3]

CAIRNS B, 1968, J ELECTROCHEM SOC, V115, pC327

[4] VAPOR GROWTH OF EPITAXIAL GAAS - SUMMARY OF PARAMETERS WHICH INFLUENCE PURITY AND MORPHOLOGY OF EPITAXIAL LAYERS [J].

DILORENZO, JV .

JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) :189-+

[5] EFFECTS OF ASCL3 MOLE FRACTION ON INCORPORATION OF GERMANIUM, SILICON, SELENIUM, AND SULFUR INTO VAPOR GROWN EPITAXIAL LAYERS OF GAAS [J].

DILORENZO, JV ;

MOORE, GE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) :1823-+

[6] VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS IN A NITROGEN ATMOSPHERE [J].

IHARA, M ;

DAZAI, K ;

RYUZAN, O .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) :528-531

[7] REACTION EQUILIBRIA IN GROWTH OF GAAS AND GAP BY CHLORIDE TRANSPORT PROCESS [J].

KIRWAN, DJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (12) :1572-&

[8] PREPARATION OF HIGH PURITY GALLIUM ARSENIDE BY VAPOUR PHASE EPITAXIAL GROWTH [J].

KNIGHT, JR ;

EFFER, D ;

EVANS, PR .

SOLID-STATE ELECTRONICS, 1965, 8 (02) :178-&

[9]

KNIGHT S, 1971, 3 P INT S GALL ARS R, P108

[10] VAPOR GROWTH OF INAS [J].

MIZUNO, O ;

WATANABE, H ;

SHINODA, D .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (02) :184-191

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