VAPOR GROWTH OF INAS

被引：27

作者：

MIZUNO, O ^{[1
]}

WATANABE, H ^{[1
]}

SHINODA, D ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD,CENT RES LABS,KAWASAKI,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1975年 / 14卷 / 02期

关键词：

D O I：

10.1143/JJAP.14.184

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：184 / 191

页数：8

相关论文

共 29 条

[1] ORIENTATION DEPENDENCE OF EPITAXIAL INASXP(1-X) ON GAAS
ALLEN, HA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (11) : 1417 - &
[2] DEPOSITION OF EPITAXIAL INASXP(1-X) ON GAAS AND GAP SUBSTRATES
ALLEN, HA
MEHAL, EW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (08) : 1081 - &
[3] METHOD FOR PRODUCING GRADED COMPOSITION EPITAXIAL LAYERS BY VAPOR DEPOSITION
BAILEY, LG
ROGERS, GG
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (05) : 834 - &
[4] Brooks H., 1955, ADVAN ELECTRON ELECT, V7, P158
[5] CAIRNS B, 1968, J ELECTROCHEM SOC, V115, pC327
[6] PREPARATION OF EPITAXIAL GAXIN1-XAS
CONRAD, RW
HOYT, PL
MARTIN, DD
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (2P1) : 164 - &
[7] EPITAXIAL INAS ON INAS SUBSTRATES
CRONIN, GR
BORRELLO, SR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (10) : 1078 - &
[8] EPITAXIAL INAS ON SEMI-INSULATING GAAS SUBSTRATES
CRONIN, GR
CONRAD, RW
BORELLO, SR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (12) : 1336 - &
[9] VAPOR GROWTH OF EPITAXIAL GAAS - SUMMARY OF PARAMETERS WHICH INFLUENCE PURITY AND MORPHOLOGY OF EPITAXIAL LAYERS
DILORENZO, JV
[J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 189 - +
[10] EFFECTS OF ASCL3 MOLE FRACTION ON INCORPORATION OF GERMANIUM, SILICON, SELENIUM, AND SULFUR INTO VAPOR GROWN EPITAXIAL LAYERS OF GAAS
DILORENZO, JV
MOORE, GE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) : 1823 - +