EPITAXIAL INAS ON INAS SUBSTRATES

被引：12

作者：

CRONIN, GR

BORRELLO, SR

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1967年 / 114卷 / 10期

关键词：

D O I：

10.1149/1.2424192

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1078 / &

共 12 条

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[5] EPITAXIAL INAS ON SEMI-INSULATING GAAS SUBSTRATES [J].

CRONIN, GR ;

CONRAD, RW ;

BORELLO, SR .

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[7] ELECTRON MOBILITY OF INDIUM ARSENIDE PHOSPHIDE [IN(ASYP1-Y)] [J].

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[8] A POLISHING ETCHANT FOR III-V SEMICONDUCTORS [J].

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[9]

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[10]

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