VAPOR GROWTH OF INAS

被引：27

作者：

MIZUNO, O ^{[1
]}

WATANABE, H ^{[1
]}

SHINODA, D ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD,CENT RES LABS,KAWASAKI,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1975年 / 14卷 / 02期

关键词：

D O I：

10.1143/JJAP.14.184

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：184 / 191

页数：8

共 29 条

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[13]

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[17]

KNIGHT S, 1970, 3 P INT S GAAS AACH, P108

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MCCARTHY, JP .

SOLID-STATE ELECTRONICS, 1967, 10 (07) :649-&

[19]

MEHAL EW, 1966, ELECTROCHEM TECHNOL, V4, P540

[20] PREPARATION AND PROPERTIES OF GAAS-INAS MIXED CRYSTALS [J].

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (03) :300-&

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