PREPARATION AND PROPERTIES OF EPITAXIAL INAS

[1] THERMAL, ELECTRICAL AND OPTICAL PROPERTIES OF (IN,GA)AS ALLOYS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 10 (2-3) : 204 - 210

[2] PREPARATION OF CRYSTALS OF INAS, INP, GAAS, AND GAP BY A VAPOR PHASE REACTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1959, 106 (06) : 509 - 511

[3] CRYSTALLOGRAPHIC IMPERFECTIONS IN EPITAXIALLY GROWN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (11) : 3281 - &

[4] GROWTH MECHANISM AND DEFECT STRUCTURES IN EPITAXIAL SILICON [J]. PHILOSOPHICAL MAGAZINE, 1962, 7 (83): : 1847 - &

[5] ELECTRON MOBILITY IN INDIUM ARSENIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 20 (1-2) : 164 - 166

[6] ROLE OF IMPURITIES IN THE HEAT TREATMENT EFFECTS OBSERVED IN INDIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (09) : 1462 - 1463

[7] HEAT TREATMENT EFFECTS IN INDIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (07) : 1300 - 1301

[8] EPITAXIAL GROWTH OF DOPED AND PURE GAAS IN AN OPEN FLOW SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (10) : 1020 - &

[9] GOLBERTH OG, 1954, Z NATURF, VA 9, P954

[10] GOLDSMITH N, 1963, RCA REV, V24, P546

[1] THERMAL, ELECTRICAL AND OPTICAL PROPERTIES OF (IN,GA)AS ALLOYS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 10 (2-3) : 204 - 210

[2] PREPARATION OF CRYSTALS OF INAS, INP, GAAS, AND GAP BY A VAPOR PHASE REACTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1959, 106 (06) : 509 - 511

[3] CRYSTALLOGRAPHIC IMPERFECTIONS IN EPITAXIALLY GROWN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (11) : 3281 - &

[4] GROWTH MECHANISM AND DEFECT STRUCTURES IN EPITAXIAL SILICON [J]. PHILOSOPHICAL MAGAZINE, 1962, 7 (83): : 1847 - &

[5] ELECTRON MOBILITY IN INDIUM ARSENIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 20 (1-2) : 164 - 166

[6] ROLE OF IMPURITIES IN THE HEAT TREATMENT EFFECTS OBSERVED IN INDIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (09) : 1462 - 1463

[7] HEAT TREATMENT EFFECTS IN INDIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (07) : 1300 - 1301

[8] EPITAXIAL GROWTH OF DOPED AND PURE GAAS IN AN OPEN FLOW SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (10) : 1020 - &

[9] GOLBERTH OG, 1954, Z NATURF, VA 9, P954

[10] GOLDSMITH N, 1963, RCA REV, V24, P546