MESA-TYPE AND PLANAR-TYPE INP METAL-INSULATOR SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH PLASMA ANODIC AL2O3 GATE OXIDE

被引：5

作者：

HIRAYAMA, Y

KOSHIGA, F

SUGANO, T

机构：

来源：

THIN SOLID FILMS | 1983年 / 103卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(83)90426-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：71 / 76

页数：6

共 11 条

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[2]

FRITZSCHE D, 1980, I PHYS C SER, V50, P258

[3] ENHANCEMENT TYPE INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH PLASMA ANODIC ALUMINUM-OXIDE AS THE GATE INSULATOR [J].

HIRAYAMA, Y ;

PARK, HM ;

KOSHIGA, F ;

SUGANO, T .

APPLIED PHYSICS LETTERS, 1982, 40 (08) :712-713

[4]

HIRAYAMA Y, 1981, I PHYS C SER, V63, P341

[5]

KAWAKAMI T, 1979, ELECTRON LETT, V15, P743, DOI 10.1049/el:19790542

[6]

LILE DL, 1981, I PHYS C SER, V56, P493

[7] MICROWAVE GAIN FROM AN N-CHANNEL ENHANCEMENT-MODE INP MISFET [J].

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COLLINS, DA .

ELECTRONICS LETTERS, 1979, 15 (18) :578-578

[8]

OHATA K, 1982, I PHYS C SER, V63, P353

[9] ANODIC AL2O3 INP INTERFACE FOR APPLICATION TO ENHANCEMENT MISFETS [J].

SAWADA, T ;

ISHII, K ;

HASEGAWA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) :397-402

[10] INGAASP NORMAL-CHANNEL INVERSION-MODE METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH LOW INTERFACE STATE DENSITY [J].

SHINODA, Y ;

KOBAYASHI, T .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) :6386-6394

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