ANODIC AL2O3 INP INTERFACE FOR APPLICATION TO ENHANCEMENT MISFETS

[1] THE GROWTH OF BARRIER OXIDE FILMS ON ALUMINUM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1959, 106 (08) : 643 - 646

[2] INTERFACE STATES IN SI-SIO2 INTERFACES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (05) : 559 - +

[3] STUDY OF THE DEEP ACCEPTOR LEVELS OF IRON IN INP [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (23): : 5145 - 5155

[4] DYNAMIC PROPERTIES OF INTERFACE-STATE BANDS IN GAAS ANODIC MOS SYSTEM [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1478 - 1482

[5] ANODIC-OXIDATION OF GAAS IN MIXED SOLUTIONS OF GLYCOL AND WATER [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) : 713 - 723

[6] ELECTRICAL MODELING OF COMPOUND SEMICONDUCTOR INTERFACE FOR FET DEVICE ASSESSMENT [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1055 - 1061

[7] Hasegawa H., 1980, Journal of the Physical Society of Japan, V49, P1125

[8] PROPERTIES OF GAAS-AL2O3 AND INP-AL2O3 INTERFACES AND THE FABRICATION OF MIS FIELD-EFFECT TRANSISTORS [J]. THIN SOLID FILMS, 1979, 56 (1-2) : 215 - 223

[9] PLASMA-GROWN OXIDE ON INP [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (03) : L211 - L213

[10] INP-AL2O3 N-CHANNEL INVERSION-MODE MOSFETS USING SULFUR-DIFFUSED SOURCE AND DRAIN [J]. ELECTRONICS LETTERS, 1979, 15 (16) : 502 - 504

[1] THE GROWTH OF BARRIER OXIDE FILMS ON ALUMINUM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1959, 106 (08) : 643 - 646

[2] INTERFACE STATES IN SI-SIO2 INTERFACES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (05) : 559 - +

[3] STUDY OF THE DEEP ACCEPTOR LEVELS OF IRON IN INP [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (23): : 5145 - 5155

[4] DYNAMIC PROPERTIES OF INTERFACE-STATE BANDS IN GAAS ANODIC MOS SYSTEM [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1478 - 1482

[5] ANODIC-OXIDATION OF GAAS IN MIXED SOLUTIONS OF GLYCOL AND WATER [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) : 713 - 723

[6] ELECTRICAL MODELING OF COMPOUND SEMICONDUCTOR INTERFACE FOR FET DEVICE ASSESSMENT [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1055 - 1061

[7] Hasegawa H., 1980, Journal of the Physical Society of Japan, V49, P1125

[8] PROPERTIES OF GAAS-AL2O3 AND INP-AL2O3 INTERFACES AND THE FABRICATION OF MIS FIELD-EFFECT TRANSISTORS [J]. THIN SOLID FILMS, 1979, 56 (1-2) : 215 - 223

[9] PLASMA-GROWN OXIDE ON INP [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (03) : L211 - L213

[10] INP-AL2O3 N-CHANNEL INVERSION-MODE MOSFETS USING SULFUR-DIFFUSED SOURCE AND DRAIN [J]. ELECTRONICS LETTERS, 1979, 15 (16) : 502 - 504