PLANAR SELF-ALIGNED ION-IMPLANTED INP MOSFET

被引：14

作者：

CAMERON, DC

IRVING, LD

WHITEHOUSE, CR

WOODWARD, J

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 12期

关键词：

D O I：

10.1049/el:19820362

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：534 / 536

页数：3

共 11 条

[1]

CAMERON DC, UNPUB THIN SOLID FIL

[2]

FRITZSCHE D, 1980, I PHYS C SER, V50, P258

[3] N-CHANNEL MISFETS ON SEMI-INSULATING INP FOR LOGIC APPLICATIONS [J].

HENRY, L ;

LECROSNIER, D ;

LHARIDON, H ;

PAUGAM, J ;

PELOUS, G ;

RICHOU, F ;

SALVI, M .

ELECTRONICS LETTERS, 1982, 18 (02) :102-103

[4]

KAWAKAMI T, 1979, ELECTRON LETT, V15, P743, DOI 10.1049/el:19790542

[5]

KINELL DK, 1981, 39TH DEV RES C SANT

[6] MICROWAVE GAIN FROM AN N-CHANNEL ENHANCEMENT-MODE INP MISFET [J].

MEINERS, LG ;

LILE, DL ;

COLLINS, DA .

ELECTRONICS LETTERS, 1979, 15 (18) :578-578

[7] CRACKING OF SIO2 LAYERS ON ANNEALED INP [J].

OBERSTAR, JD ;

STREETMAN, BG ;

SAMMANN, EA .

THIN SOLID FILMS, 1981, 81 (04) :347-356

[8] SLOW CURRENT-DRIFT MECHANISM IN N-CHANNEL INVERSION TYPE INP-MISFET [J].

OKAMURA, M ;

KOBAYASHI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (11) :2143-2150

[9] A VIRTUAL SELF-ALIGNED PROCESS FOR N-CHANNEL INP IGFETS (OR MISFETS) [J].

TSENG, WF ;

BARK, ML ;

DIETRICH, HB ;

CHRISTOU, A ;

HENRY, RL ;

SCHMIDT, WA ;

SAKS, NS .

ELECTRON DEVICE LETTERS, 1981, 2 (11) :299-301

[10]

WHITEHOUSE CR, UNPUB

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