PREPARATION AND ELECTRICAL-PROPERTIES OF INPXOY GATE INSULATORS ON INP

被引：28

作者：

CHANG, HL

MEINERS, LG

SA, CJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 05期

关键词：

D O I：

10.1063/1.96557

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：375 / 377

页数：3

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