A DC TO 16GHZ INDIUM-PHOSPHIDE MISFET

被引:41
作者
MESSICK, L
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10.1016/0038-1101(80)90036-2
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码:551 / &
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  • [1] INP SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS
    BARRERA, JS
    ARCHER, RJ
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) : 1023 - 1030
  • [2] FIRST ANODIC-OXIDE GAAS MOSFETS BASED ON EASY TECHNOLOGICAL PROCESSES
    BAYRAKTAROGLU, B
    KOHN, E
    HARTNAGEL, HL
    [J]. ELECTRONICS LETTERS, 1976, 12 (02) : 53 - 54
  • [3] GALLIUM ARSENIDE MOS TRANSISTORS
    BECKE, H
    HALL, R
    WHITE, J
    [J]. SOLID-STATE ELECTRONICS, 1965, 8 (10) : 813 - &
  • [4] BECKE HW, 1967, ELECTRONICS, V40, P82
  • [5] INP-SIO2 MIS STRUCTURE WITH REDUCED INTERFACE STATE DENSITY NEAR CONDUCTION-BAND
    FRITZSCHE, D
    [J]. ELECTRONICS LETTERS, 1978, 14 (03) : 51 - 52
  • [6] FRITZSCHE D, 1979, P C INSULATING FILMS
  • [7] ION-IMPLANTED N-CHANNEL INP METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
    GLEASON, KR
    DIETRICH, HB
    HENRY, RL
    COHEN, ED
    BARK, ML
    [J]. APPLIED PHYSICS LETTERS, 1978, 32 (09) : 578 - 581
  • [8] LOW-NOISE GAAS MESFETS
    HEWITT, BS
    COX, HM
    FUKUI, H
    DILORENZO, JV
    SCHLOSSER, WO
    IGLESIAS, DE
    [J]. ELECTRONICS LETTERS, 1976, 12 (12) : 309 - 310
  • [9] KAWAKAMI T, 1979, ELECTRON LETT, V15, P743, DOI 10.1049/el:19790542
  • [10] N-CHANNEL INVERSION-MODE INP MISFET
    LILE, DL
    COLLINS, DA
    MEINERS, LG
    MESSICK, L
    [J]. ELECTRONICS LETTERS, 1978, 14 (20) : 657 - 659