EFFECTS ON INP SURFACE TRAP STATES OF INSITU ETCHING AND PHOSPHORUS-NITRIDE DEPOSITION

被引：24

作者：

JEONG, YH

TAKAGI, S

ARAI, F

SUGANO, T

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 06期

关键词：

D O I：

10.1063/1.339501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2370 / 2375

页数：6

共 32 条

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[14]

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