CHEMICAL VAPOR-DEPOSITION AND CHARACTERIZATION OF PHOSPHORUS-NITRIDE (P3N5) GATE INSULATORS FOR INP METAL-INSULATOR-SEMICONDUCTOR DEVICES

被引：49

作者：

HIROTA, Y

KOBAYASHI, T

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 07期

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D O I：

10.1063/1.331380

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：5037 / 5043

页数：7

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共 20 条

[1] AL-AL2O3-INP MIS STRUCTURES
FAVENNEC, PN
LECONTELLEC, M
LHARIDON, H
PELOUS, GP
RICHARD, J
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (11) : 807 - 808
[2] INP-SIO2 MIS STRUCTURE WITH REDUCED INTERFACE STATE DENSITY NEAR CONDUCTION-BAND
FRITZSCHE, D
[J]. ELECTRONICS LETTERS, 1978, 14 (03) : 51 - 52
[3] THE EFFECTS OF ANNEALING METAL-INSULATOR-SEMICONDUCTOR DIODES EMPLOYING A THERMAL NITRIDE-INP INTERFACE
HIROTA, Y
OKAMURA, M
KOBAYASHI, T
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 536 - 540
[4] EFFECT OF PYROLYTIC AL2O3 DEPOSITION TEMPERATURE ON INVERSION-MODE INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
KOBAYASHI, T
OKAMURA, M
YAMAGUCHI, E
SHINODA, Y
HIROTA, Y
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) : 6434 - 6436
[5] METAL-INSULATOR-SEMICONDUCTOR DIODES FABRICATED ON INP, INGAASP, AND INGAAS
KOBAYASHI, T
SHINODA, Y
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3339 - 3341
[6] Kobayashi T., UNPUB
[7] CHARACTERIZATION OF IMPROVED INSB INTERFACES
LANGAN, JD
VISWANATHAN, CR
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1474 - 1477
[8] N-CHANNEL INVERSION-MODE INP MISFET
LILE, DL
COLLINS, DA
MEINERS, LG
MESSICK, L
[J]. ELECTRONICS LETTERS, 1978, 14 (20) : 657 - 659
[9] AN INP MIS DIODE
LILE, DL
COLLINS, DA
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (09) : 554 - 556
[10] ELECTRICAL-PROPERTIES OF SIO2 AND SI3N4 DIELECTRIC LAYERS ON INP
MEINERS, LG
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 373 - 379