THE EFFECTS OF ANNEALING METAL-INSULATOR-SEMICONDUCTOR DIODES EMPLOYING A THERMAL NITRIDE-INP INTERFACE

被引：12

作者：

HIROTA, Y

OKAMURA, M

KOBAYASHI, T

机构：

来源：

关键词：

D O I：

10.1063/1.329914

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：536 / 540

页数：5

共 14 条

[1] FRITZCHE D, 1979, UNPUB JUL DIG C INS
[2] MOS AVALANCHE AND TUNNELING EFFECTS IN SILICON SURFACES
GOETZBERGER, A
NICOLLIA.FH
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (12) : 4582 - +
[3] GRANT AJ, 1979, I PHYS C SER, V50, P266
[4] SURFACE CONTROLLED INP-MIS (METAL-INSULATOR-SEMICONDUCTOR) TRIODES
HIROTA, Y
OKAMURA, M
YAMAGUCHI, E
NISHIOKA, T
SHINODA, Y
KOBAYASHI, T
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) : 3498 - 3503
[5] GAAS INVERSION-TYPE MIS TRANSISTORS
ITO, T
SAKAI, Y
[J]. SOLID-STATE ELECTRONICS, 1974, 17 (07) : 751 - 759
[6] N-CHANNEL INVERSION-MODE INP MISFET
LILE, DL
COLLINS, DA
MEINERS, LG
MESSICK, L
[J]. ELECTRONICS LETTERS, 1978, 14 (20) : 657 - 659
[7] LILE DL, 1980, UNPUB SEP INT C GALL
[8] IMPROVED INTERFACE IN INVERSION-TYPE INP-MISFET BY VAPOR ETCHING TECHNIQUE
OKAMURA, M
KOBAYASHI, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (11) : 2151 - 2156
[9] ROBERTS GG, 1978, SOLID STATE ELECTRON, V2, P169
[10] SHINODA Y, UNPUB J APPL PHYS