COMPOSITION OF PHOSPHORUS-NITRIDE FILM DEPOSITED ON INP SURFACES BY A PHOTOCHEMICAL VAPOR-DEPOSITION TECHNIQUE AND ELECTRICAL-PROPERTIES OF THE INTERFACE

被引：25

作者：

JEONG, YH ^{[1
]}

LEE, JH ^{[1
]}

BAE, YH ^{[1
]}

HONG, YT ^{[1
]}

机构：

[1] RES INST IND SCI & TECHNOL,DEPT ELECTR & ELECT ENGN,POHANG,SOUTH KOREA

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 25期

关键词：

D O I：

10.1063/1.104192

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-temperature (100-200°C) growth of phosphorus nitride (P 3N5) on InP surfaces has been successfully developed using a mixture of PCl3 and NH3 gases by a direct photochemical vapor deposition. The films have a resistivity of 1×1014 Ω cm and a breakdown voltage of 1×107 V/cm. The minimum density of interface trap states for the aluminum (Al)-P3N 5-InP metal-insulator-semiconductor structure after the in situ processes is about 3.6×1010 cm-2 eV-1 near the midgap of InP. Auger electron spectroscopy and x-ray photoelectron spectroscopy measurements were used to evaluate the film and the film/InP interface.

引用

页码：2680 / 2682

页数：3

共 13 条

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