共 36 条
[3]
DYNAMIC PROPERTIES OF INTERFACE-STATE BANDS IN GAAS ANODIC MOS SYSTEM
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1979, 16 (05)
:1478-1482
[5]
HYBRID ORBITAL ENERGY FOR HETEROJUNCTION BAND LINEUP
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1986, 25 (04)
:L265-L268
[6]
PHOTO-IONIZATION AND THERMAL-ACTIVATION OF COMPOUND SEMICONDUCTOR MOS INTERFACES AND ORIGIN OF INTERFACE STATES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1982, 21 (02)
:457-462
[8]
A COMMON ENERGY REFERENCE FOR DX CENTERS AND EL2 LEVELS IN III-V COMPOUND SEMICONDUCTORS
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1986, 25 (04)
:L319-L322
[9]
ELECTRONIC AND MICROSTRUCTURAL PROPERTIES OF DISORDER-INDUCED GAP STATES AT COMPOUND SEMICONDUCTOR-INSULATOR INTERFACES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1987, 5 (04)
:1097-1107
[10]
UNIFIED DISORDER INDUCED GAP STATE MODEL FOR INSULATOR-SEMICONDUCTOR AND METAL-SEMICONDUCTOR INTERFACES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1986, 4 (04)
:1130-1138