UNIVERSAL ALIGNMENT OF TRANSITION-METAL IMPURITY LEVELS IN III-V AND II-VI COMPOUND SEMICONDUCTORS

被引：17

作者：

HASEGAWA, H

机构：

来源：

SOLID STATE COMMUNICATIONS | 1986年 / 58卷 / 03期

关键词：

D O I：

10.1016/0038-1098(86)90833-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：157 / 160

页数：4

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[7] HASEGAWA H, 1986, 13TH ANN C PHYS CHEM
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