A SELF-CONSISTENT COMPUTER-SIMULATION OF COMPOUND SEMICONDUCTOR METAL-INSULATOR-SEMICONDUCTOR C-V CURVES BASED ON THE DISORDER-INDUCED GAP-STATE MODEL

被引:75
作者
HE, L
HASEGAWA, H
SAWADA, T
OHNO, H
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10.1063/1.341067
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O59 [应用物理学];
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页码:2120 / 2130
页数:11
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共 36 条
[32]   TIME-DEPENDENT RESPONSE OF INTERFACE STATES IN INDIUM-PHOSPHIDE METAL-INSULATOR SEMICONDUCTOR CAPACITORS INVESTIGATED WITH CONSTANT-CAPACITANCE DEEP-LEVEL TRANSIENT SPECTROSCOPY [J].
VANSTAA, P ;
ROMBACH, H ;
KASSING, R .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) :4014-4021
[33]   NATIVE OXIDE FORMATION AND ELECTRICAL INSTABILITIES AT THE INSULATOR/INP INTERFACE [J].
WAGER, JF ;
GEIB, KM ;
WILMSEN, CW ;
KAZMERSKI, LL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :778-781
[34]   ELECTRONIC PROPERTIES OF AN AMORPHOUS SOLID .1. SIMPLE TIGHT-BINDING THEORY [J].
WEAIRE, D ;
THORPE, MF .
PHYSICAL REVIEW B, 1971, 4 (08) :2508-&
[35]   SURFACE CHARACTERIZATION OF INDIUM-PHOSPHIDE [J].
WILLIAMS, RH ;
MCGOVERN, IT .
SURFACE SCIENCE, 1975, 51 (01) :14-28
[36]  
YOKOYAMA N, 1981, 1981 INT EL DEV M, P80