TIME-DEPENDENT RESPONSE OF INTERFACE STATES IN INDIUM-PHOSPHIDE METAL-INSULATOR SEMICONDUCTOR CAPACITORS INVESTIGATED WITH CONSTANT-CAPACITANCE DEEP-LEVEL TRANSIENT SPECTROSCOPY

被引：66

作者：

VANSTAA, P

ROMBACH, H

KASSING, R

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 07期

关键词：

D O I：

10.1063/1.332582

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：4014 / 4021

页数：8

相关论文

共 23 条

[1] INP-SIO2 MIS STRUCTURE WITH REDUCED INTERFACE STATE DENSITY NEAR CONDUCTION-BAND
FRITZSCHE, D
[J]. ELECTRONICS LETTERS, 1978, 14 (03) : 51 - 52
[2] FRITZSCHE D, 1980, I PHYS C SER, V50, P258
[3] ELECTRON-HOLE RECOMBINATION IN GERMANIUM
HALL, RN
[J]. PHYSICAL REVIEW, 1952, 87 (02): : 387 - 387
[4] EFFECTS OF OXIDE TRAPS ON MOS CAPACITANCE
HEIMAN, FP
WARFIELD, G
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (04) : 167 - &
[5] INTERFACE PROPERTIES OF ANODICALLY OXIDIZED GAAS MIS CAPACITORS
KASSING, R
KELBERLAU, U
VANSTAA, P
[J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1982, 52 (01) : 43 - 55
[6] INP-AL2O3 N-CHANNEL INVERSION-MODE MOSFETS USING SULFUR-DIFFUSED SOURCE AND DRAIN
KAWAKAMI, T
OKAMURA, M
[J]. ELECTRONICS LETTERS, 1979, 15 (16) : 502 - 504
[7] DRIFT PHENOMENA IN CDSE THIN FILM FETS
KOELMANS, H
DEGRAAFF, HC
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (10) : 997 - &
[8] GAP STATES AT THE GAAS NATURAL OXIDE INTERFACE
KREUTZ, EW
SCHROLL, P
[J]. SURFACE TECHNOLOGY, 1981, 12 (03): : 217 - 230
[9] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032
[10] FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS
LANG, DV
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3014 - 3022