INTERFACE PROPERTIES OF ANODICALLY OXIDIZED GAAS MIS CAPACITORS

被引：4

作者：

KASSING, R

KELBERLAU, U

VANSTAA, P

机构：

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1982年 / 52卷 / 01期

关键词：

D O I：

10.1080/00207218208901394

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：43 / 55

页数：13

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