ANODIC OXIDES ON GAAS .4. THIN ANODIC OXIDES ON GAAS

被引:1
作者
BAYRAKTAROGLU, B
HARTNAGEL, HL
机构
[1] Department of Electrical and Electronic Engineering, University of Newcastle upon Tyne, Newcastle upon Tyne
关键词
D O I
10.1080/00207217908900961
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
As the anodic oxides produced on GaAs become thinner, the highly resistive nature of the oxides changes rapidly, allowing large leakage or tunnelling currents through the oxide without, however, permanently changing the original properties of the oxide layer. A considerable deviation from ideal insulator properties was observed with native oxides thinner than about 250 Å, and with anodic Al2O3 thinner than 100 Å. In the reverse bias conditions, MOS structures employing very thin oxides (< 100 Å) can allow leakage currents of a few A cm-2 with non-destructive white light emission. By limiting the minority carrier leakage currents, inversion changes can be made to accumulate near the GaAs surface and with such thin oxide GaAs MOS structures, light-enhanced currents were observed with large enhancement factors. © 1979 Taylor and Francis Group, LLC.
引用
收藏
页码:1 / 11
页数:11
相关论文
共 9 条
[1]   ANODIC OXIDES ON GAAS .3. ELECTRICAL-PROPERTIES [J].
BAYRAKTAROGLU, B ;
HARTNAGEL, HL .
INTERNATIONAL JOURNAL OF ELECTRONICS, 1978, 45 (06) :561-571
[2]   ANODIC OXIDES ON GAAS .2. ANODIC AL2O3 AND COMPOSITE OXIDES ON GAAS [J].
BAYRAKTAROGLU, B ;
HARTNAGEL, HL .
INTERNATIONAL JOURNAL OF ELECTRONICS, 1978, 45 (05) :449-463
[3]   ANODIC OXIDES ON GAAS .1. ANODIC NATIVE OXIDES ON GAAS [J].
BAYRAKTAROGLU, B ;
HARTNAGEL, HL .
INTERNATIONAL JOURNAL OF ELECTRONICS, 1978, 45 (04) :337-352
[4]  
BREEZE P, 1978, 153RD SPRING M EL SO, V78, P336
[5]   ANODIC OXIDE ON GAAS - QUANTITATIVE CHEMICAL DEPTH PROFILES OBTAINED USING AUGER-SPECTROSCOPY AND NEUTRON-ACTIVATION ANALYSIS [J].
CHANG, CC ;
SCHWARTZ, B ;
MURARKA, SP .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (06) :922-926
[6]   NON-EQUILIBRIUM EFFECTS ON METAL-OXIDE-SEMICONDUCTOR TUNNEL CURRENTS [J].
CLARKE, RA ;
SHEWCHUN, J .
SOLID-STATE ELECTRONICS, 1971, 14 (10) :957-&
[7]   CURRENT MULTIPLICATION IN METAL-INSULATOR-SEMICONDUCTOR (MIS) TUNNEL-DIODES [J].
GREEN, MA ;
SHEWCHUN, J .
SOLID-STATE ELECTRONICS, 1974, 17 (04) :349-365
[8]  
Pierret R. F., 1970, Solid-State Electronics, V13, P269, DOI 10.1016/0038-1101(70)90179-6
[9]   SURFACE OXIDE TRANSISTOR (SOT) [J].
SHEWCHUN, J ;
CLARKE, RA .
SOLID-STATE ELECTRONICS, 1973, 16 (02) :213-&