CURRENT MULTIPLICATION IN METAL-INSULATOR-SEMICONDUCTOR (MIS) TUNNEL-DIODES

[1] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

[2] NON-EQUILIBRIUM EFFECTS ON METAL-OXIDE-SEMICONDUCTOR TUNNEL CURRENTS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (10) : 957 - &

[3] FRANZ W, 1956, HDB PHYSIK, V17

[4] THEORY OF TUNNELING INTO INTERFACE STATES [J]. SOLID-STATE ELECTRONICS, 1970, 13 (11) : 1483 - +

[5] GOKHALE BV, 1970, IEEE T ELEC DEV, VED17, P594

[6] GREEN MLH, TO BE PUBLISHED

[7] GUMMEL HK, 1964, IEEE T ELECTRON DEVI, VED11, P355

[8] TUNNELING FROM AN INDEPENDENT-PARTICLE POINT OF VIEW [J]. PHYSICAL REVIEW, 1961, 123 (01): : 85 - &

[9] INTERFACE STATES IN MOS STRUCTURES WITH 20-40 A THICK SIO2 FILMS ON NONDEGENERATE SI [J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 221 - +

[10] SURFACE OXIDE TRANSISTOR (SOT) [J]. SOLID-STATE ELECTRONICS, 1973, 16 (02) : 213 - &

[1] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

[2] NON-EQUILIBRIUM EFFECTS ON METAL-OXIDE-SEMICONDUCTOR TUNNEL CURRENTS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (10) : 957 - &

[3] FRANZ W, 1956, HDB PHYSIK, V17

[4] THEORY OF TUNNELING INTO INTERFACE STATES [J]. SOLID-STATE ELECTRONICS, 1970, 13 (11) : 1483 - +

[5] GOKHALE BV, 1970, IEEE T ELEC DEV, VED17, P594

[6] GREEN MLH, TO BE PUBLISHED

[7] GUMMEL HK, 1964, IEEE T ELECTRON DEVI, VED11, P355

[8] TUNNELING FROM AN INDEPENDENT-PARTICLE POINT OF VIEW [J]. PHYSICAL REVIEW, 1961, 123 (01): : 85 - &

[9] INTERFACE STATES IN MOS STRUCTURES WITH 20-40 A THICK SIO2 FILMS ON NONDEGENERATE SI [J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 221 - +

[10] SURFACE OXIDE TRANSISTOR (SOT) [J]. SOLID-STATE ELECTRONICS, 1973, 16 (02) : 213 - &