SURFACE OXIDE TRANSISTOR (SOT)

被引：32

作者：

SHEWCHUN, J

CLARKE, RA

机构：

[1] MCMASTER UNIV,DEPT ENGN PHYS,HAMILTON,ONTARIO,CANADA

[2] MCMASTER UNIV,INST MAT RES,HAMILTON,ONTARIO,CANADA

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 02期

关键词：

D O I：

10.1016/0038-1101(73)90031-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：213 / &

相关论文

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