CHARACTERISTICS OF INJECTING POINT CONTACTS ON SEMICONDUCTORS .I. IN DARKNESS

被引：7

作者：

BRAUN, I

HENISCH, HK

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(66)90074-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：981 / &

共 13 条

[1] ARMSTRONG HL, 1956, IRE T ELECTRON DEVIC, P86
[2] THE VARIATION OF POINT CONTACT INJECTION RATIO WITH EMITTER CURRENT
BANBURY, PC
HOUGHTON, J
[J]. PHYSICA, 1954, 20 (11): : 1050 - 1053
[3] THEORY OF THE FORWARD CHARACTERISTIC OF INJECTING POINT CONTACTS
BANBURY, PC
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1953, 66 (406): : 833 - 840
[4] THEORY OF RELATION BETWEEN HOLE CONCENTRATION AND CHARACTERISTICS OF GERMANIUM POINT CONTACTS
BARDEEN, J
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1950, 29 (04): : 469 - 495
[5] PHYSICAL PRINCIPLES INVOLVED IN TRANSISTOR ACTION
BARDEEN, J
BRATTAIN, WH
[J]. PHYSICAL REVIEW, 1949, 75 (08): : 1208 - 1225
[6] BENEKING H, 1958, Z ANGEW PHYS, V10, P216
[7] METAL-SEMICONDUCTOR RECTIFIERS AND TRANSISTORS
GOSSICK, BR
[J]. SOLID-STATE ELECTRONICS, 1963, 6 (05) : 445 - 452
[8] ON THE TRANSIENT BEHAVIOR OF SEMICONDUCTOR RECTIFIERS
GOSSICK, BR
[J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (08) : 905 - 911
[9] HOGARTH CA, 1953, 779 TRE MEM
[10] REVERSE CHARACTERISTICS OF HIGH INVERSE VOLTAGE POINT CONTACT GERMANIUM RECTIFIERS
SIMPSON, JH
ARMSTRONG, HL
[J]. JOURNAL OF APPLIED PHYSICS, 1953, 24 (01) : 25 - 34