ON THE TRANSIENT BEHAVIOR OF SEMICONDUCTOR RECTIFIERS

被引：40

作者：

GOSSICK, BR

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1956年 / 27卷 / 08期

关键词：

D O I：

10.1063/1.1722512

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：905 / 911

页数：7

共 13 条

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[2]

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[4]

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[6] EINFLUSS VON DIFFUSIONSLANGE UND OBERFLACHENREKOMBINATION AUF DEN SPERRSCHICHT-PHOTOEFFEKT AN GERMANIUM [J].

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SCHULTZ, W .

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[7]

JAHNKE E, 1945, TABLES FUNCTIONS, P35

[8] TRANSIENT RESPONSE OF A P-N JUNCTION [J].

LAX, B ;

NEUSTADTER, SF .

JOURNAL OF APPLIED PHYSICS, 1954, 25 (09) :1148-1154

[9] MEASUREMENT OF MINORITY CARRIER LIFETIME AND SURFACE EFFECTS IN JUNCTION DEVICES [J].

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GIACOLETTO, LJ .

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[10] ZUR THEORIE DER GLEICHRICHTUNG AM KONTAKT METALL - HALBLEITER [J].

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