NATIVE OXIDE FORMATION AND ELECTRICAL INSTABILITIES AT THE INSULATOR/INP INTERFACE

被引：49

作者：

WAGER, JF

GEIB, KM

WILMSEN, CW

KAZMERSKI, LL

机构：

[1] COLORADO STATE UNIV,DEPT ELECT ENGN,FT COLLINS,CO 80523

[2] SOLAR ENERGY RES INST,GOLDEN,CO 80401

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 03期

关键词：

D O I：

10.1116/1.582691

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：778 / 781

页数：4

共 18 条

[1] PHOTOEMISSION STUDY OF AU SCHOTTKY-BARRIER FORMATION ON GASB, GAAS, AND INP USING SYNCHROTRON RADIATION [J].

CHYE, PW ;

LINDAU, I ;

PIANETTA, P ;

GARNER, CM ;

SU, CY ;

SPICER, WE .

PHYSICAL REVIEW B, 1978, 18 (10) :5545-5559

[2]

FRITZSCHE D, 1980, I PHYS C SER, V50, P258

[3]

Kiselev A.V., 1975, INFRARED SPECTRA SUR

[4] TOTAL VALENCE-BAND DENSITIES OF STATES OF III-V AND II-VI COMPOUNDS FROM X-RAY PHOTOEMISSION SPECTROSCOPY [J].

LEY, L ;

POLLAK, RA ;

MCFEELY, FR ;

KOWALCZY.SP ;

SHIRLEY, DA .

PHYSICAL REVIEW B, 1974, 9 (02) :600-621

[5] THE EFFECT OF INTERFACIAL TRAPS ON THE STABILITY OF INSULATED GATE DEVICES ON INP [J].

LILE, DL ;

TAYLOR, MJ .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) :260-267

[6] INVERSION-LAYERS ON INP [J].

MEINERS, LG ;

LILE, DL ;

COLLINS, DA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1458-1461

[7] IMPROVED INTERFACE IN INVERSION-TYPE INP-MISFET BY VAPOR ETCHING TECHNIQUE [J].

OKAMURA, M ;

KOBAYASHI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (11) :2151-2156

[8] SLOW CURRENT-DRIFT MECHANISM IN N-CHANNEL INVERSION TYPE INP-MISFET [J].

OKAMURA, M ;

KOBAYASHI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (11) :2143-2150

[9] HIGH-QUALITY TRANSPARENT CONDUCTIVE INDIUM OXIDE-FILMS PREPARED BY THERMAL EVAPORATION [J].

PAN, CA ;

MA, TP .

APPLIED PHYSICS LETTERS, 1980, 37 (02) :163-165

[10] UNTERSUCHUNGEN DER ELEKTRISCHEN UND LICHTELEKTRISCHEN LEITFAHIGKEIT DUNNER INDIUMOXYDSCHICHTEN [J].

RUPPRECHT, G .

ZEITSCHRIFT FUR PHYSIK, 1954, 139 (05) :504-517

← 1 2 →