SURFACE CHARACTERIZATION OF INDIUM-PHOSPHIDE

被引:83
作者
WILLIAMS, RH [1 ]
MCGOVERN, IT [1 ]
机构
[1] NEW UNIV ULSTER,SCH PHYS SCI,COLERAINE,NORTH IRELAND
关键词
D O I
10.1016/0039-6028(75)90230-7
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:14 / 28
页数:15
相关论文
共 19 条
[1]  
BAYLISS CR, TO BE PUBLISHED
[2]   TRANSFERRED ELECTRON PHOTOEMISSION FROM INP [J].
BELL, RL ;
JAMES, LW ;
MOON, RL .
APPLIED PHYSICS LETTERS, 1974, 25 (11) :645-646
[3]   PHOTOEMISSION FROM INP-CS-O [J].
BELL, RL ;
UEBBING, JJ .
APPLIED PHYSICS LETTERS, 1968, 12 (03) :76-&
[4]  
BELL RL, 1973, NEGATIVE ELECTRON AF
[5]  
CARDONA M, 1964, 7 P INT C PHYS SEM, P181
[6]  
Festenberg C. V., 1969, Zeitschrift fur Physik A (Atoms and Nuclei), V227, P453, DOI 10.1007/BF01394892
[7]   PHOTOELECTRIC EMISSION AND WORK FUNCTION OF INP [J].
FISCHER, TE .
PHYSICAL REVIEW, 1966, 142 (02) :519-&
[8]   TEMPERATURE-DEPENDENCE AND ILLUMINATION-DEPENDENCE OF WORK FUNCTION OF GALLIUM-ARSENIDE [J].
GALBRAIT.LK ;
FISCHER, TE .
SURFACE SCIENCE, 1972, 30 (01) :185-&
[9]   CORE LEVELS OF III-V SEMICONDUCTORS [J].
GUDAT, W ;
YU, PY ;
CARDONA, M ;
PENCHINA, CM ;
KOCH, EE .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1972, 52 (02) :505-&
[10]   BAND STRUCTURE AND HIGH-FIELD TRANSPORT PROPERTIES OF INP [J].
JAMES, LW ;
VANDYKE, JP ;
HERMAN, F ;
CHANG, DM .
PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (10) :3998-+