On the origin of stacking faults at the GaAs/ZnSe heterointerface

被引:20
作者
BourretCourchesne, ED
机构
[1] Center for Advanced Materials (2-200), Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley
关键词
D O I
10.1063/1.115902
中图分类号
O59 [应用物理学];
学科分类号
摘要
A series of experiments was designed to assess the effects of the various stages of the nucleation process on the formation of stacking faults at the GaAs/ZnSe interface. Differential interference contrast microscopy was used to image stacking faults and misfit dislocations in 1000 Angstrom thick ZnSe layers. We have demonstrated that an As-stabilized GaAs surface is needed to obtain a low density of stacking faults. However, an excess of As favors the formation of stacking faults. More importantly, the introduction of Zn drastically increases the stacking fault density.
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页码:1675 / 1677
页数:3
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