PHASE-FORMATION PROCESSES IN SOLUTION AT THE ATOMIC-LEVEL - METAL CHALCOGENIDE SEMICONDUCTORS

被引：115

作者：

FROMENT, M ^{[1
]}

LINCOT, D ^{[1
]}

机构：

[1] ECOLE NATL SUPER CHIM,ELECTROCHIM & CHIM ANALYT LAB,F-75231 PARIS 05,FRANCE

来源：

ELECTROCHIMICA ACTA | 1995年 / 40卷 / 10期

关键词：

CDS; ZNS; SOLUTION GROWTH; STRUCTURAL STUDIES; HRTEM;

D O I：

10.1016/0013-4686(95)00065-M

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The improvement of deposition processes from solutions need a better understanding of the phase formation processes at the atomic level. This study concerns chemical bath deposition of chalcogenide semiconductors (CdS, ZnS, CdSe). Correlations between the growth mechanism and the structure of the films are established from Transmission Electron Microscopy (TEM) and High Resolution TEM measurements. Two dominant mechanisms are evidenced-from structural studies, an atom by atom process for CdS and a cluster by cluster process for ZnS and CdSe. Structural defects in CdS are identified. Possible relations with optical properties and composition of the layers are given.

引用

页码：1293 / 1303

页数：11

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